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BUW133 データシート(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BUW133 データシート(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUW133/A DESCRIPTION ·High Switching Speed ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V (Min)-BUW133 500V (Min)-BUW133A APPLICATIONS ·Designed for use in very fast switching applications in inductive circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT BUW133 850 VCES Collector- Emitter Voltage(VBE= 0) BUW133A 1000 V BUW133 450 VCEO Collector-Emitter Voltage BUW133A 500 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 20 A IB B Base Current 10 A IBM Base Current-Peak 15 A PC Collector Power Dissipation @TC=25℃ 135 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.93 ℃/W isc Website:www.iscsemi.cn |
同様の部品番号 - BUW133 |
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同様の説明 - BUW133 |
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