2SA649 datasheet(1/3 Pages) ISC

部品番号	2SA649

部品情報	Silicon PNP Power Transistors

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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1 / 3 page

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2SA649

DESCRIPTION

·With TO-3 package

·Wide area of safe operation

APPLICATIONS

·For low frequency and large power

switching applications

PINNING(see Fig.2)

DESCRIPTION

1

Base

2

Emitter

3

Collector

Absolute maximum ratings(Ta=℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

-150

V

VCEO

Collector-emitter voltage

Open base

-150

V

VEBO

Emitter-base voltage

Open collector

-6

V

IC

Collector current

-7

A

ICM

Collector current-peak

-11

A

PC

Collector power dissipation

TC=25℃

80

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-55~150

℃

Fig.1 simplified outline (TO-3) and symbol

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