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SGSF313PI データシート(PDF) 1 Page - Inchange Semiconductor Company Limited |
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SGSF313PI データシート(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor SGSF313PI DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min) ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Designed to be used as switch in high efficency off-line (220V mains) switching power supplies for consumer applications like sets VCR’s and monitors. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEX Collector-Emitter Voltage (VBE= -2.5V) 1000 V VCES Collector-Emitter Voltage (VBE=0) 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 10 A IB B Base Current 3 A IBM Base Current-Peak 6 A PD Total Power Dissipation @TC=25℃ 35 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Rresistance,Junction to Case 3.57 ℃/W isc Website:www.iscsemi.cn |
同様の部品番号 - SGSF313PI |
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同様の説明 - SGSF313PI |
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