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BUT76AF データシート(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BUT76AF データシート(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT76AF DESCRIPTION ·High Voltage ·High Speed Switching ·High Power Dissipation APPLICATIONS ·Designed for switching mode power supply, inverters, motor control and relay driver applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak 20 A IB B Base Current-Continuous 3 A IBM Base Current-peak 6 A PC Collector Power Dissipation @TC=25℃ 40 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.13 ℃/W isc Website：www.iscsemi.cn |
同様の部品番号 - BUT76AF |
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同様の説明 - BUT76AF |
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