 |
データシートサーチシステム |
|
|
データシートサーチシステム |
|
BUW133H データシート(PDF) 1 Page - Inchange Semiconductor Company Limited |
|
|
|||||||||||||||||||||||||||||
BUW133H データシート(HTML) 1 Page - Inchange Semiconductor Company Limited |
|
|
1 / 2 page  INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUW133H DESCRIPTION ·High Switching Speed ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V APPLICATIONS ·Designed for use in very fast switching applications in inductive circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCES Collector- Emitter Voltage (VBE= 0) 850 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 20 A IB B Base Current 10 A IBM Base Current-Peak 15 A PC Collector Power Dissipation @TC=25℃ 135 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.93 ℃/W isc Website：www.iscsemi.cn |
同様の部品番号 - BUW133H |
|
同様の説明 - BUW133H |
|
|
|
リンク URL |
| ALLDATASHEETはお客様のビジネスに役立ちますか？ [ DONATE ] |
Alldatasheetは | 広告 | お問い合わせ | プライバシーポリシー | データシートへのリンク | リンク交換 | メーカーリスト All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Japanese ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
