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2SA1010 データシート(PDF) 2 Page - Inchange Semiconductor Company Limited

部品番号 2SA1010
部品情報  isc Silicon PNP Power Transistor
PDF  3 Pages
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メーカー  ISC [Inchange Semiconductor Company Limited]
ホームページ  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SA1010 データシート(HTML) 2 Page - Inchange Semiconductor Company Limited

  2SA1010 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2SA1010 Datasheet HTML 2Page - Inchange Semiconductor Company Limited 2SA1010 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
2SA1010
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= -5.0A ; IB= -0.5A, L=1mH
-100
V
VCEX(SUS)-1
Collector-Emitter Sustaining Voltage
IC= -5.0A ; IB1=-IB2= -0.5A,
VBE(OFF)=5.0V, L=180μH,clamped
-100
V
VCEX(SUS)-2
Collector-Emitter Sustaining Voltage
IC= -10A ; IB1= -1.0A; IB2= -0.5A,
VBE(OFF)= 5.0V, L= 180μH,clamped
-100
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= -5.0A; IB= -0.5A
B
-0.6
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= -5.0A; IB= -0.5A
B
-1.5
V
ICBO
Collector Cutoff Current
VCB= -100V ; IE=0
-10
μA
ICER
Collector Cutoff Current
VCE= -100V ; RBE= 51Ω,Ta=125℃
-1.0
mA
ICEX
Collector Cutoff Current
VCE= -100V; VBE(off)= -1.5V
VCE= -100V; VBE(off)= -1.5V,Ta=125℃
-10
-1.0
μA
mA
IEBO
Emitter Cutoff Current
VEB= -5V; IC=0
-10
μA
hFE-1
DC Current Gain
IC= -0.5A ; VCE= -5V
40
200
hFE-2
DC Current Gain
IC= -3.0A ; VCE= -5V
40
200
hFE-3
DC Current Gain
IC= -5.0A ; VCE= -5V
20
Switching times
ton
Turn-on Time
0.5
μs
tstg
Storage Time
1.5
μs
tf
Fall Time
IC= -5.0A ,RL= 10Ω,
IB1= -IB2= -0.5A,VCC≈-50V
0.5
μs
hFE-2 Classifications
M
L
K
40-80
60-120
100-200
isc Website：www.iscsemi.cn
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