2SA1292 datasheet(2/3 Pages) ISC

部品番号	2SA1292

部品情報	Silicon PNP Power Transistors

PDF	3 Pages

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2SA1292

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CBO

Collector-base breakdown voltage

IC=-1mA ,IE=0

-80

V(BR)CEO

Collector-emitter breakdown voltage

IC=-1mA ,IB=0

-60

V(BR)EBO

Emitter-base breakdown voltage

IE=-1mA ,IC=0

-5

VCEsat

Collector-emitter saturation voltage

IC=-7.5A; IB=-0.375A

-0.4

ICBO

Collector cut-off current

VCB=-40V; IE=0

-100

μA

IEBO

Emitter cut-off current

VEB=-4V; IC=0

-100

μA

hFE

DC current gain

IC=-1A ; VCE=-2V

280

Transition frequency

IC=-1A ; VCE=-5V

100

MHz

Switching times

ton

Turn-on time

0.1

μs

Storage time

0.5

μs

Fall time

IC=-6A IB1=- IB2=-0.3A

VCC=-20V;RL=3.3Ω

0.1

μs

hFE Classifications

70-140

100-200

140-280

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