2SA1757 datasheet(1/2 Pages) ISC

部品番号	2SA1757

部品情報	Silicon PNP Power Transistor

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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INCHANGE Semiconductor

Product Specification

Silicon PNP Power Transistor

2SA1757

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -60V(Min)

·High Switching Speed

·Low Saturation Voltage-

: VCE(sat)= -0.3V(Max)@ (IC= -3A, IB= -0.15A)

B

·Wide Area of Safe Operation

APPLICATIONS

·Designed for power switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-100

V

VCEO

Collector-Emitter Voltage

-60

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-5

A

ICM

Collector Current-Peak

-10

A

Collector Power Dissipation

@Ta=25℃

2

PC

Collector Power Dissipation

@TC=25℃

25

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55~150

℃

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