BUT11 datasheet(1/2 Pages) ISC

部品番号	BUT11

部品情報	isc Silicon NPN Power Transistor

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

BUT11

DESCRIPTION

·High Voltage

·High Speed Switching

APPLICATIONS

·Converters

·Inverters

·Switching regulators

·Motor control systems

ABSOLUTE MAXIMUM RATINGS (Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

850

V

VCEO

Collector-Emitter Voltage

400

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current-Continuous

5

A

ICM

Collector Current-Peak

10

A

IB

B

Base Current

2

A

PC

Collector Power Dissipation

@TC=25℃

100

W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

1.25

℃/W

isc Website：www.iscsemi.cn

同様の部品番号 - BUT11

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NXP Semiconductors	BUT11	96Kb / 12P	Silicon diffused power transistors 1997 Aug 13
Power Innovations Ltd	BUT11	128Kb / 6P	NPN SILICON POWER TRANSISTOR
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Fairchild Semiconductor	BUT11	42Kb / 4P	High Voltage Power Switching Applications

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