MJ2501 datasheet(1/2 Pages) ISC

部品番号	MJ2501

部品情報	isc Silicon PNP Darlingtion Power Transistor

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Darlingtion Power Transistor

MJ2501

DESCRIPTION

·Built-in Base-Emitter Shunt Resistors

·High DC current gain-

hFE = 1000 (Min) @ IC = -5A

·Collector-Emitter Breakdown Voltage-

V(BR)CEO= -80V(Min)

·Complement to type MJ3001

APPLICATIONS

·Designed for use as output devices in complementary

general purpose amplifier applications.

ABSOLUTE MAXIMUM RATINGS(TC=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-80

V

VCEO

Collector-Emitter Voltage

-80

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current -Continuous

-10

A

IB

B

Base Current

-0.2

A

PC

Collector Power Dissipation@TC=25℃

150

W

TJ

Junction Temperature

200

℃

Tstg

Storage Temperature

-55~200

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

1.17

℃/W

isc Website：www.iscsemi.cn

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