MJ423 datasheet(1/2 Pages) ISC

部品番号	MJ423

部品情報	isc Silicon NPN Power Transistor

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

MJ423

DESCRIPTION

·High Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= 325V(Min.)

·DC Current Gain-

: hFE= 30-90@ IC= 1A

APPLICATIONS

·Designed for medium to high voltage inverters, converters,

regulators and switching circuits.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

400

V

VCEX

Collector-Emitter Voltage

400

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

10

A

IB

B

Base Current-Continuous

2

A

PC

Collector Power Dissipation@TC=25℃

125

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~200

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

1.0

℃/W

isc Website：www.iscsemi.cn

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