2N5344 datasheet(1/2 Pages) ISC

部品番号	2N5344

部品情報	isc Silicon PNP Power Transistor

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Website：www.iscsemi.cn

isc Silicon PNP Power Transistor

2N5344

DESCRIPTION

·High Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= -250V(Min)

·High Switching Speed

·High Current-Gain Bandwidth Product-

: fT= 60MHz(Min)@ IC= -0.1A

APPLICATIONS

·Designed for high voltage switching and amplifier

applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

4.38

℃/W

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-250

V

VCEO

Collector-Emitter Voltage

-250

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-1.0

A

IB

Base Current-Continuous

-0.5

A

PD

Total Power Dissipation@TC=25℃

40

W

TJ

Junction Temperature

200

℃

Tstg

Storage Temperature

-65~200

℃

同様の部品番号 - 2N5344

メーカー	部品番号	データシート	部品情報
Seme LAB	2N5344	16Kb / 1P	Bipolar PNP Device in a Hermetically sealed TO66
New Jersey Semi-Conduct...	2N5344	125Kb / 1P	1 AMPERE POWER TRANSISTORS PNP SILICON
Seme LAB	2N5344A	16Kb / 1P	Bipolar PNP Device in a Hermetically sealed TO66

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