2N5429 datasheet(1/2 Pages) ISC

部品番号	2N5429

部品情報	isc Silicon NPN Power Transistor

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Website：www.iscsemi.cn

isc Silicon NPN Power Transistor

2N5429

DESCRIPTION

·Contunuous Collector Current-IC= 7A

·Low Collector-Emitter Saturation Voltage-

: VCE(sat)= 1.2V(Max) @IC= 7A

·Wide Area of Safe Operation

APPLICATIONS

·Designed for switching and wide-band amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

4.37

℃/W

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

100

V

VCEO

Collector-Emitter Voltage

100

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current-Continuous

7

A

IB

Base Current-Continuous

1

A

PC

Collector Power Dissipation@TC=25℃

40

W

TJ

Junction Temperature

200

℃

Tstg

Storage Temperature

-65~200

℃

同様の部品番号 - 2N5429

メーカー	部品番号	データシート	部品情報
Mospec Semiconductor	2N5429	132Kb / 3P	POWER TRANSISTORS(7A,40W)
Central Semiconductor C...	2N5429	51Kb / 1P	Power Transistors
Savantic, Inc.	2N5429	115Kb / 3P	Silicon NPN Power Transistors
Seme LAB	2N5429	15Kb / 1P	Bipolar NPN Device in a Hermetically sealed TO66
New Jersey Semi-Conduct...	2N5429	176Kb / 1P	COLLECTOR EMITTER VOLTAGE

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