2N6476 datasheet(1/3 Pages) ISC

部品番号	2N6476

部品情報	Silicon PNP Power Transistors

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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1 / 3 page

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2N6475 2N6476

DESCRIPTION

·With TO-220 package

·Low collector saturation voltage

·Excellent safe operating area

APPLICATIONS

·General-purpose medium power for

switching and amplifier applications

PINNING

DESCRIPTION

1

Emitter

2

Collector;connected to

mounting base

3

Base

Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

2N6475

-110

VCBO

Collector-base voltage

2N6476

Open emitter

-130

V

2N6475

-100

VCEO

Collector-emitter voltage

2N6476

Open base

-120

V

VEBO

Emitter-base voltage

Open collector

-5

V

IC

Collector current

-4

A

IB

Base current

-2

A

PT

Total power dissipation

TC=25℃

40

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal resistance from junction to case

3.125

℃/W

Fig.1 simplified outline (TO-220) and symbol

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