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2SD600 データシート(PDF) 1 Page - Inchange Semiconductor Company Limited

部品番号 2SD600
部品情報  isc Silicon NPN Power Transistor
PDF  3 Pages
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メーカー  ISC [Inchange Semiconductor Company Limited]
ホームページ  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SD600 データシート(HTML) 1 Page - Inchange Semiconductor Company Limited

  2SD600 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2SD600 Datasheet HTML 2Page - Inchange Semiconductor Company Limited 2SD600 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD600
DESCRIPTION
·High Collector Current-IC= 1.0A
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min)
·Good Linearity of hFE
·Low Saturation Voltage
·Complement to Type 2SB631
APPLICATIONS
·Designed for power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
1
A
ICP
Collector Current-Pulse
2
A
Collector Power Dissipation
@ TC=25℃
8
PC
Collector Power Dissipation
@ Ta=25℃
1
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn


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