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BD645 データシート(PDF) 1 Page - Inchange Semiconductor Company Limited

部品番号 BD645
部品情報  isc Silicon NPN Darlington Power Transistor
PDF  2 Pages
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メーカー  ISC [Inchange Semiconductor Company Limited]
ホームページ  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BD645 データシート(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
BD645
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min)
·High DC Current Gain
: hFE= 750(Min) @IC= 3A
·Low Saturation Voltage
·Complement to Type BD646
APPLICATIONS
·Designed for use as complementary AF push-pull output
stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
8
A
ICP
Collector Current-Peak
12
A
IB
B
Base Current-Continuous
0.3
A
Collector Power Dissipation
@ Ta=25℃
2
PC
Collector Power Dissipation
@ TC=25℃
62.5
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
2
℃/W
Rth j-a
Thermal Resistance,Junction to Ambient
62.5
℃/W
isc Website：www.iscsemi.cn


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