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TIP41C データシート(PDF) 1 Page - Dc Components |
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TIP41C データシート(HTML) 1 Page - Dc Components |
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1 / 1 page ![]() TIP41C DISCRETE SEMICONDUCTORS R DC COMPONENTS CO., LTD. TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use in general purpose amplifier and switching applications. Pinning 1 = Base 2 = Collector 3 = Emitter TO-220AB Dimensions in inches and (millimeters) .625(15.87) .570(14.48) .562(14.27) .500(12.70) .055(1.39) .045(1.15) .185(4.70) .173(4.40) .405(10.28) .380(9.66) .295(7.49) .220(5.58) .350(8.90) .330(8.38) .640 (16.25) Typ .055(1.40) .045(1.14) .037(0.95) .030(0.75) .100 (2.54) Typ .024(0.60) .014(0.35) Φ.151 Φ(3.83) Typ 1 2 3 Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 100 V Collector Current IC 6 A Total Power Dissipation(TC=25oC) PD 65 W Total Power Dissipation PD 2 W Junction Temperature TJ +150 o C Storage Temperature TSTG -55 to +150 o C Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Min Typ Max Unit Test Conditions Collector-Base Breakdown Volatge BVCBO 100 - - V IC=1mA, IE=0 Collector-Emitter Breakdown Voltage BVCEO 100 - - V IC=30mA, IB=0 Collector Cutoff Current ICES - - 400 µA VCE=100V, IB=0 ICEO - - 700 µA VCE=60V, IB=0 Emitter Cutoff Current IEBO - - 1 mA VEB=5V, IC=0 Collector-Emitter Saturation Voltage(1) VCE(sat) - - 1.5 V IC=6A, IB=0.6A Base-Emitter On Voltage(1) VBE(on) - - 2 V IC=6A, VCE=4V DC Current Gain(1) hFE1 30 - - - IC=0.3A, VCE=4V hFE2 15 - 75 - IC=3A, VCE=4V Transition Frequency fT 3 - - MHz IC=0.5A, VCE=10V, f=1MHz Electrical Characteristics (Ratings at 25oC ambient temperature unless otherwise specified) (1)Pulse Test: Pulse Width 380 µs, Duty Cycle 2% Rank A B Range 15~50 40~75 Classification of hFE2 |
同様の部品番号 - TIP41C |
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同様の説明 - TIP41C |
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