SBAS16 datasheet(1/2 Pages) SECOS

部品番号	SBAS16

部品情報	High-Speed Switching Diode

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メーカー	SECOS [SeCoS Halbleitertechnologie GmbH]

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Elektronische Bauelemente

SBAS16

High-Speed

Switching Diode

* The SBAS16 is designed for high-speed switching

Description

application in hybrid thick and thin-film circuits.

* The devices is manufactured by the silicon epitaxial

planar process and packed in a plastic surface

mount package.

Marking

01-Jun-2002 Rev. A

Page 1 of 2

Reverse Voltage

Tj, Tstg

PD

VR

VRR

IF

IFR

IFSM

Symbol

C

1000

250

500

200

-65~+150

Operating Junction and Storage Temperature Range

Forward Current

Repetitive Forward Current

Forward Surge Current (1ms)

Total Power Dissipation

C

o

Repetitive Reverse Voltage

Parameter

Ratings

Unit

mA

V

mW

mA

mW

75

85

Absolute Maximum Ratings at TA = 25 o

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

A6

Dim

Min

Max

A

2.70

3.10

B

1.40

1.60

C

1.00

1.30

D

0.35

0.50

G

1.70

2.10

H

0.00

0.10

J

0.10

0.26

K

0.20

0.60

L

0.85

1.15

S

2.40

2.80

All Dimension in mm

SC-59

S

G

D

B

L

A

1

3

2

Top View

H

C

J

K

-

Characteristics at TA = 25 ::::

Characteristic

Symbol

Min.

Max.

Unit

Test Conditions

Reverse Breakdown Voltage

V(BR)

75

-

V

IR=100uA

VF(1)

-

715

mV

IF=1mA

VF(2)

-

855

mV

IF=10mA

VF(3)

-

1000

mV

IF=50mA

Forward Voltage

VF(4)

-

1250

mV

IF=150mA

Reverse Current

IR

-

1

uA

VR=75V

Total Capacitance

CT

2

pF

VR=0, f=1MHz

Reverse Recovery Time

Trr

-

6

nS

IF=IR=10mA, RL=100 Ł measured at IR=1mA

RoHS Compliant Product

A suffix of "-C" specifies halogen & lead-free

同様の部品番号 - SBAS16

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