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Dated: 03/06/2006
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
MMFTP84
Characteristics at Tj = 25 OC unless otherwise specified
Parameter
Symbol
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
at -ID = 10 µA
-V(BR)DSS
50
-
-
V
Gate-Source Threshold Voltage
at VDS = VGS, -ID = 1 mA
-VGSth
0.8
-
2
V
Drain-Source Leakage Current
at -VDS = 40 V
at -VDS = 50 V
at -VDS = 50 V, T
j = 125
O
C
-IDSS
-
-
-
-
-
-
100
10
60
nA
µA
µA
Gate Leakage Current
at VGS = ± 20 V
IGSS
-
-
± 10
nA
Drain-Source On-State Resistance
at -VGS = 10 V, -ID = 130 mA
RDSon
-
-
10
Ω
Forward Transfer admittance
at -VDS = 25 V, -ID = 130 mA
│yfs│
50
-
-
mS
Input Capacitance
at -VDS = 25 V, f = 1 MHz
Ciss
-
-
45
pF
Output Capacitance
at -VDS = 25 V, f = 1 MHz
Coss
-
-
25
pF
Reverse Transfer Capacitance
at -VDS = 25 V, f = 1 MHz
Crss
-
-
12
pF
Turn-On Time
at VGS = 0 to -10 V, -VDD = 40 V, -ID = 200 mA
ton
-
3
-
ns
Turn-Off Time
at VGS = -10 to 0 V, -VDD = 40 V, -ID = 200 mA
toff
-
7
-
ns
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