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SSG4501 データシート(PDF) 3 Page - SeCoS Halbleitertechnologie GmbH

部品番号 SSG4501
部品情報  Enhancement Mode Power Mos.FET
PDF  9 Pages
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メーカー  SECOS [SeCoS Halbleitertechnologie GmbH]
ホームページ  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SSG4501 データシート(HTML) 3 Page - SeCoS Halbleitertechnologie GmbH

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Electrical Characteristics P-Channel( Tj=25 C Unless otherwise specified)
Total Gate Charge
RDS(ON)
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
Unit
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25 )
Static Drain-Source On-Resistance
Drain-Source Leakage Current (Tj=70 )
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
BVDSS
BVDS/ Tj
VGS(th)
IGSS
IDSS
Crss
Qg
Qgs
Qgd
Td(ON)
Td(Off)
Tr
Ciss
Coss
Tf
-30
-0.028
-1.0
100
-1
-25
50
90
20
3.5
2
12
20
45
27
790
440
120
±
V
V/
V
nA
uA
uA
m
nC
nS
pF
Ω
VGS=0V
VDS=-15V
f=1.0MHz
VDS=-15V
ID=-1A
VGS=-10V
RG=6
RD=15
Ω
Ω
ID=-5.3A
VDS=-15V
VGS=-10V
VGS=-10V, ID=-5.3A
VGS=-4.5V, ID=-4.2A
VGS=0V, ID=-250uA
VGS= 20V
±
VDS=-30V,VGS=0
VDS=-24V,VGS=0
VDS=VGS, ID=-250uA
Reference to 25 , ID=-1mA
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2
Forward Transconductance
Gfs
S
8.5
VDS=-10V, ID=-5.3A
_
_
_
-3.0
o
C
o
C
o
C
o
C
o
2
2
_
_
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page
3 of 9
Elektronische Bauelemente
SSG
4501
N Channel
7A, 30V,RDS(ON) 28m
Enhancement Mode Power Mos.FET
P Channel -5.3A, -30V,RDS(ON) 5
0m
Ω
Ω
Source-Drain Diode
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
Unit
Forward On Voltage
Continous Source Current (Body Diode)
VSD
Is
_
_
_
_
IS=-2.6A,VGS=0V.Tj=25 C
=-1.2V
-1.2
-1.67
o
VD=VG=0V,VS
V
A
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width 300us, dutycycle 2%.
≦
≦
3.Surface mounted on 1 inch2 copper pad of FR4 board;135
when mounted on min. copper pad.
°
C/W
2



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