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SSG4565 データシート(PDF) 3 Page - SeCoS Halbleitertechnologie GmbH

部品番号 SSG4565
部品情報  Enhancement Mode Power Mos.FET
PDF  7 Pages
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メーカー  SECOS [SeCoS Halbleitertechnologie GmbH]
ホームページ  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SSG4565 データシート(HTML) 3 Page - SeCoS Halbleitertechnologie GmbH

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Elektronische Bauelemente
SSG4565
Enhancement Mode Power Mos.FET
Electrical Characteristics P-Channel( Tj=25 C
Unless otherwise specified)
Total Gate Charge
RDS(ON)
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
Unit
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25 )
Static Drain-Source On-Resistance
Drain-Source Leakage Current (Tj=70 )
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
BVDSS
BVDS/ Tj
VGS(th)
IGSS
IDSS
Crss
Qg
Qgs
Qgd
Td(ON)
Td(Off)
Tr
Ciss
Coss
Tf
-40
-0.03
-1.0
100
-1
-25
33
42
20
4
10
11
7
67
43
1440
250
190
±
V
V/
V
nA
uA
uA
m
nC
nS
pF
Ω
VGS=0V
VDS=-25V
f=1.0MHz
VDS=-20V
ID=-1A
VGS=-10V
RG=3.3
RD=20
Ω
Ω
ID=-6A
VDS=-32V
VGS=-4.5V
VGS=-10V, ID=-6A
VGS=-4.5V, ID=-4A
VGS=0V, ID=-250uA
VGS= 20V
±
VDS=-40V,VGS=0
VDS=-32V,VGS=0
VDS=VGS, ID=-250uA
Reference to 25 ,ID=-1mA
_
_
_
Source-Drain Diode
_
_
_
_
_
_
_
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
Unit
Forward On Voltage
Reverse Recovery Time
VSD
Trr
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
27
IS=-1.7A, VGS=0V.
Is=-6A, VGS=0V
V
ns
-1.2
_
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width 300us, dutycycle 2%.
2
3.Surface mounted on 1 inch2 copper pad of FR4 board; 270
when mounted on min. copper pad.
°
C/W
Forward Transconductance
Gfs
S
10
VDS=-10V, ID=-6A
_
_
_
2300
23
Reverse Recovery Charge
Qrr
_
nC
_
-3.0
32
dl/dt=100A/us
o
C
o
C
o
C
o
C
o
2
2
2
2
≦
≦
Ω
01-Jun-2002 Rev. A
Page
3 of 7
P Channel 6.5A, 40V,RDS(ON) 33m
N Channel 7.6A, 40V,RDS(ON) 25mΩ



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