EPA680A/EPA680AV

UPDATED 05/02/2006

High Efficiency Heterojunction Power FET

Specifications are subject to change without notice.

Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085

page 3 of 3

Revised May 2006

S-PARAMETERS

EPA680AV

8V, 1/2 Idss

Freq

S11

S21

S12

S22

(GHz)

Mag

Ang

Mag

Ang

Mag

Ang

Mag

Ang

1

0.962

-166.0

7.084

90.5

0.011

16.4

0.651

-175.5

2

0.965

-174.4

3.544

79.4

0.012

17.2

0.660

-175.8

3

0.968

-177.9

2.340

70.9

0.011

25.3

0.665

-175.1

4

0.971

180.0

1.727

62.9

0.013

32.7

0.683

-174.6

5

0.970

179.9

1.334

56.3

0.012

38.2

0.712

-176.1

6

0.974

178.3

1.089

49.5

0.013

43.4

0.733

-176.6

7

0.974

177.2

0.918

43.0

0.013

53.8

0.748

-177.4

8

0.976

175.6

0.785

37.5

0.015

55.3

0.768

-177.2

9

0.981

174.6

0.684

31.2

0.014

55.3

0.784

-178.6

10

0.978

173.2

0.598

25.1

0.013

58.5

0.808

178.6

11

0.975

171.9

0.523

20.9

0.018

62.1

0.835

178.2

12

0.984

170.5

0.463

15.4

0.016

62.8

0.853

176.4

13

0.984

170.9

0.407

10.7

0.017

59.7

0.848

174.3

14

0.980

169.1

0.349

6.4

0.019

62.2

0.860

173.8

15

0.991

169.7

0.320

3.4

0.017

58.8

0.869

172.0

16

0.973

168.6

0.281

-1.3

0.017

53.4

0.884

170.0

17

0.993

168.0

0.256

-5.1

0.017

59.0

0.888

168.5

18

0.981

167.8

0.226

-8.3

0.017

50.7

0.906

167.7

19

0.986

166.4

0.210

-11.8

0.018

51.7

0.911

166.2

20

0.989

165.4

0.196

-14.6

0.020

45.1

0.910

165.5

21

0.981

159.4

0.192

-18.9

0.022

42.2

0.920

165.7

22

0.986

159.1

0.172

-22.8

0.021

45.3

0.931

164.4

23

0.987

158.3

0.160

-25.4

0.022

50.5

0.932

162.3

24

0.988

158.7

0.142

-28.2

0.024

51.6

0.936

159.1

25

0.980

158.9

0.126

-28.7

0.022

50.1

0.911

158.1

26

0.961

159.2

0.114

-30.3

0.027

50.9

0.933

157.5

Note: The data included 0.7 mils diameter Au bonding wires: 4 gate wires, 15 mils each; 4 drain wires, 15 mils each;