EPA680A/EPA680AV

UPDATED 05/02/2006

High Efficiency Heterojunction Power FET

Specifications are subject to change without notice.

Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085

page 2 of 3

Revised May 2006

S-PARAMETERS

EPA680A

8V, 1/2 Idss

Freq

S11

S21

S12

S22

(GHz)

Mag

Ang

Mag

Ang

Mag

Ang

Mag

Ang

1

0.943

-164.0

7.210

90.7

0.009

21.7

0.681

-174.6

2

0.944

-173.1

3.626

78.2

0.011

23.5

0.697

-174.5

3

0.945

-176.8

2.393

68.8

0.011

26.1

0.711

-173.2

4

0.942

-179.5

1.770

60.1

0.013

36.0

0.727

-172.8

5

0.941

178.9

1.441

52.6

0.014

41.6

0.745

-172.3

6

0.940

176.6

1.133

44.8

0.015

45.8

0.765

-172.6

7

0.944

174.7

0.921

38.3

0.016

48.4

0.798

-172.8

8

0.944

173.0

0.761

32.0

0.015

47.5

0.817

-173.6

9

0.942

171.1

0.638

25.9

0.016

53.6

0.840

-174.0

10

0.945

169.2

0.550

20.4

0.017

54.5

0.857

-175.2

11

0.947

167.6

0.477

15.2

0.018

52.5

0.870

-175.8

12

0.946

166.5

0.422

10.5

0.020

52.9

0.885

-177.2

13

0.946

165.3

0.376

5.9

0.021

46.6

0.887

-178.3

14

0.948

165.0

0.339

1.6

0.023

53.1

0.904

-179.8

15

0.939

164.4

0.309

-2.1

0.024

47.6

0.900

179.5

16

0.945

164.5

0.285

-5.0

0.022

45.8

0.914

178.6

17

0.938

164.5

0.262

-9.1

0.024

45.2

0.920

177.4

18

0.931

164.8

0.240

-11.9

0.028

41.0

0.915

175.8

19

0.937

164.8

0.223

-14.8

0.028

40.1

0.926

175.8

20

0.931

165.3

0.211

-16.4

0.033

41.9

0.936

175.3

21

0.919

163.0

0.195

-20.6

0.036

39.0

0.948

175.1

22

0.924

161.1

0.185

-23.2

0.038

40.6

0.935

176.8

23

0.907

159.4

0.180

-26.0

0.043

35.9

0.949

175.1

24

0.908

156.4

0.173

-29.9

0.049

31.5

0.937

175.2

25

0.898

155.1

0.169

-33.5

0.056

29.0

0.944

173.6

26

0.888

152.3

0.168

-37.4

0.066

24.1

0.939

172.1

Note: The data included 0.7 mils diameter Au bonding wires: 4 gate wires, 15 mils each; 4 drain wires, 15 mils each;

10 source wires, 7 mils each.