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CSS-S20123A9 データシート(PDF) 4 Page - China Semiconductor Corporation |
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CSS-S20123A9 データシート(HTML) 4 Page - China Semiconductor Corporation |
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4 / 7 page ![]() CHINA SEMICONDUCTOR Spec. No. CORPORATION Rev. Absolute Maximum Rating - Symbol Unit PAD mW IAF mA IPF mA - mA/ VR V Topr Tstg Note:Solder temperature 1/16 inch below seating plane for 3 seconds at 260 Electro-optical Characteristics - Symbol Min. Typ. Max. Unit VF - 2.0 2.8 V Iv 3.6 9 - mcd P - 612 - nm - 20 - nm IR - - 100 A IV-m - - 2:1 . Page 3/6 Luminous Intensity Matching Ratio IF=10mA http://www.csctw.com.tw IF=20mA VR=5V PS-DS-S20122/S20123A9 IF=20mA IF=20mA IF=10mA Model No CSS-S20122/S20123A9 Parameter Forward Voltage Per Segment Luminous Intensity Per Segment Spectrum Radiation Bandwidth Reverse Current Peak Emission Wavelength (Ta=25 ) A (Ta=25 ) Condition 0.33 5 -40 ~ +105 Rating 70 25 -40 ~ +105 Parameter 90 Power Dissipation Per Dice Continuous Forward Current Per Dice Peak Current Per Dice(duty cycle 1/10,1KHz) Derating Linear From 25 Per Dice Reverse Voltage Per Dice Operating Temp. Storage Temp. |
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