BC636 BC638 BC640

3

Motorola Small–Signal Transistors, FETs and Diodes Device Data

–1000

–1

–2

–5

–10

–20

–50

–100

–200

–500

–100

–1

–2

–3 –4 –5

–7 –10

–20

–30–40 –50 –70

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 1. Active Region Safe Operating Area

BC636

BC638

BC640

PD TA 25°C

PD TC 25°C

SOA = 1S

PD TC 25°C

PD TA 25°C

500

200

100

50

20

–1

–3

–5

–10

–30 –50

–100

–300 –500 –1000

IC, COLLECTOR CURRENT (mA)

Figure 2. DC Current Gain

VCE = –2 V

500

300

100

50

20

–1

–10

–100

–1000

IC, COLLECTOR CURRENT (mA)

Figure 3. Current Gain Bandwidth Product

–1

–0.8

–0.6

–0.4

–0.2

0

–1

–10

IC, COLLECTOR CURRENT (mA)

Figure 4. “Saturation” and “On” Voltages

VBE(sat) @ IC/IB = 10

VBE(on) @ VCE = –2 V

VCE(sat) @ IC/IB = 10

–0.2

–1.0

–2.2

–1.6

IC, COLLECTOR CURRENT (mA)

Figure 5. Temperature Coefficients

VCE = –2 VOLTS

∆T = 0°C to +100°C

θV for VBE

–A

–B

–L

VCE = –2 V

–100

–1000

–1

–3

–5

–10

–30 –50

–100

–300 –500 –1000