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LE25FW808 データシート(PDF) 21 Page - Sanyo Semicon Device |
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LE25FW808 データシート(HTML) 21 Page - Sanyo Semicon Device |
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21 / 27 page ![]() LE25FW808 No.A0839-21/27 Specifications Absolute Maximum Ratings Parameter Symbol Conditions Ratings unit Maximum supply voltage With respect to VSS -0.5 to +4.6 V DC voltage (all pins) With respect to VSS -0.5 to VDD+0.5 V Storage temperature Tstg -55 to +150 °C Operating Conditions Parameter Symbol Conditions Ratings unit Operating supply voltage 2.7 to 3.6 V 0 to 70 Operating ambient temperature -40 to +85 (Planning) °C Allowable DC Operating Conditions Ratings Parameter Symbol Conditions min typ max unit Power Supply Current (Normal Mode) ICCR CS = 0.1VDD, HOLD = WP = 0.9VDD SI = 0.1VDD / 0.9VDD, SO =open clock frequency = 50MHz, VDD = VDD max 8mA CS = 0.1VDD, SO = WP = HOLD = SI = open VDD = VDD max. Clock frequency = 16MHz (Power saving mode) 3 6 mA CS = 0.1VDD, SO = WP = HOLD = SI = open VDD = VDD max. Clock frequency = 25MHz (frequency setting=0:1) 6 12 mA Power Supply Current (HD_Read) ICCR CS = 0.1VDD, SO = WP = HOLD = SI = open VDD = VDD max. Clock frequency = 50MHz (frequency setting=1:0) 10 20 mA Power Supply Current (Write) ICCW VDD = VDD max tSSE=80ms, tSE=100ms, tCHE=250ms, tPP=0.5ms 15 mA CMOS standby current ISB CS = HOLD = WP = VDD-0.3V, SO = open SI = VIH / VIL, VDD = VDD max 10 µA Input Leakage Current ILI VIN = VSS to VDD, VDD = VDD max 2 µA Output Leakage Current ILO VIN = VSS to VDD, VDD = VDD max 2 µA Input Low Voltage VIL VDD = VDD max -0.3 0.3 VDD V Input High Voltage VIH VDD = VDD min 0.7VDD VDD+0.3 V IOL = 100μA, VDD = VDD min 0.2 V Output low Voltage VOL IOL = 1.6mA, VDD = VDD min 0.4 Output High Voltage VOH IOH = -100μA, VDD = VDD min VDD-0.2 V Power-on Timing Ratings Parameter Symbol min max unit Time from power-on to read operation tPU_READ 100 μs Time from power-on to write operation tPU_WRITE 10 ms Power-down time tPD 10 ms Power-down voltage vBOT 0.2 V Pin Capacitance at Ta=25 °C, f=1MHz Ratings Parameter Symbol Conditions max unit Output pin capacitance CDQ VDQ=0V 12 pF Input pin Capacitance CIN VIN=0V 6 pF Note: These parameter values do not represent the results of measurements undertaken for all devices but rather values for some of the sampled devices. |
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