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LE25FW808 データシート(PDF) 21 Page - Sanyo Semicon Device

部品番号 LE25FW808
部品情報  8M-bit (1024K횞8) Serial Flash Memory with High-Density Read Mode
PDF  27 Pages
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メーカー  SANYO [Sanyo Semicon Device]
ホームページ  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

LE25FW808 データシート(HTML) 21 Page - Sanyo Semicon Device

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LE25FW808
No.A0839-21/27
Specifications
Absolute Maximum Ratings
Parameter
Symbol
Conditions
Ratings
unit
Maximum supply voltage
With respect to VSS
-0.5 to +4.6
V
DC voltage (all pins)
With respect to VSS
-0.5 to VDD+0.5
V
Storage temperature
Tstg
-55 to +150
°C
Operating Conditions
Parameter
Symbol
Conditions
Ratings
unit
Operating supply voltage
2.7 to 3.6
V
0 to 70
Operating ambient temperature
-40 to +85
(Planning)
°C
Allowable DC Operating Conditions
Ratings
Parameter
Symbol
Conditions
min
typ
max
unit
Power Supply Current
(Normal Mode)
ICCR
CS = 0.1VDD, HOLD = WP = 0.9VDD
SI = 0.1VDD / 0.9VDD, SO =open
clock frequency = 50MHz, VDD = VDD max
8mA
CS = 0.1VDD, SO = WP = HOLD = SI = open
VDD = VDD max.
Clock frequency = 16MHz (Power saving mode)
3
6
mA
CS = 0.1VDD, SO = WP = HOLD = SI = open
VDD = VDD max.
Clock frequency = 25MHz (frequency setting=0:1)
6
12
mA
Power Supply Current
(HD_Read)
ICCR
CS = 0.1VDD, SO = WP = HOLD = SI = open
VDD = VDD max.
Clock frequency = 50MHz (frequency setting=1:0)
10
20
mA
Power Supply Current
(Write)
ICCW
VDD = VDD max
tSSE=80ms, tSE=100ms, tCHE=250ms, tPP=0.5ms
15
mA
CMOS standby current
ISB
CS = HOLD = WP = VDD-0.3V, SO = open
SI = VIH / VIL, VDD = VDD max
10
µA
Input Leakage Current
ILI
VIN = VSS to VDD, VDD = VDD max
2
µA
Output Leakage Current
ILO
VIN = VSS to VDD, VDD = VDD max
2
µA
Input Low Voltage
VIL
VDD = VDD max
-0.3
0.3 VDD
V
Input High Voltage
VIH
VDD = VDD min
0.7VDD
VDD+0.3
V
IOL = 100μA, VDD = VDD min
0.2
V
Output low Voltage
VOL
IOL = 1.6mA, VDD = VDD min
0.4
Output High Voltage
VOH
IOH = -100μA, VDD = VDD min
VDD-0.2
V
Power-on Timing
Ratings
Parameter
Symbol
min
max
unit
Time from power-on to read operation
tPU_READ
100
μs
Time from power-on to write operation
tPU_WRITE
10
ms
Power-down time
tPD
10
ms
Power-down voltage
vBOT
0.2
V
Pin Capacitance at Ta=25
°C, f=1MHz
Ratings
Parameter
Symbol
Conditions
max
unit
Output pin capacitance
CDQ
VDQ=0V
12
pF
Input pin Capacitance
CIN
VIN=0V
6
pF
Note: These parameter values do not represent the results of measurements undertaken for all devices but rather values
for some of the sampled devices.



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