BD158 datasheet(1/4 Pages) MOTOROLA

部品番号	BD158

部品情報	Plastic Medium Power NPN Silicon Transistor

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メーカー	MOTOROLA [Motorola, Inc]

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1

Motorola Bipolar Power Transistor Device Data

Plastic Medium Power NPN

Silicon Transistor

. . . designed for power output stages for television, radio, phonograph and other

consumer product applications.

• Suitable for Transformerless, Line–Operated Equipment

• Thermopad{ Construction Provides High Power Dissipation Rating for High

Reliability

MAXIMUM RATINGS

Rating

Symbol

BD 157

BD 158

BD 159

Unit

Collector–Emitter Voltage

VCEO

250

300

350

Vdc

Collector–Base Voltage

VCB

275

325

375

Vdc

Emitter–Base Voltage

VEB

5.0

Vdc

Collector Current — Continuous

Peak

IC

0.5

1.0

Adc

Base Current

IB

0.25

Adc

Total Device Dissipation @ TC = 25_C

Derate above 25

_C

PD

20

0.16

Watts

W/

_C

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 65 to + 150

_C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

θJC

6.25

_C/W

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Type

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage

(IC = 1.0 mAdc, IB = 0)

BVCEO

BD 157

BD 158

BD 159

250

300

350

—

Vdc

Collector Cutoff Current

(At rated voltage)

ICBO

—

100

µAdc

Emitter Cutoff Current

(VEB = 5.0 Vdc, IC = 0)

IEBO

—

100

µAdc

ON CHARACTERISTICS

DC Current Gain

(IC = 50 mAdc, VCE = 10 Vdc)

hFE

30

240

—

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by BD157/D

BD157

BD158

BD159

0.5 AMPERE

POWER TRANSISTORS

NPN SILICON

250 – 300 – 350 VOLTS

20 WATTS

CASE 77–08

TO–225AA TYPE

REV 7

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