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STP3N150 データシート(PDF) 5 Page - STMicroelectronics |
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STP3N150 データシート(HTML) 5 Page - STMicroelectronics |
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5 / 16 page ![]() STFV3N150, STFW3N150, STP3N150, STW3N150 Electrical characteristics 5/16 Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off-delay time Fall time VDD = 750 V, ID = 1.25 A, RG = 4.7 Ω, VGS = 10 V (see Figure 18) 24 47 45 61 ns ns ns ns Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) 2.5 10 A A VSD (2) 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD = 2.5 A, VGS = 0 1.6 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 2.5 A, di/dt = 100 A/µs VDD= 60 V (see Figure 20) 410 2.4 11.7 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 2.5 A, di/dt = 100 A/µs VDD= 60 V, Tj = 150 °C (see Figure 20) 540 3.3 12.3 ns µC A |
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