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3DD13007 データシート(PDF) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
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3DD13007 データシート(HTML) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
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1 / 1 page ![]() JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 3DD13007 TRANSISTOR (NPN) FEATURES Power dissipation PCM: 2 W (Tamb=25 ℃) Collector current ICM: 8 A Collector-base voltage V(BR)CBO: 700 V Operating and storage junction temperature range TJ, Tstg: -55 ℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25 ℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 1mA, IE=0 700 V Collector-emitter breakdown voltage V(BR)CEO Ic= 10mA, IB=0 400 V Emitter-base breakdown voltage V(BR)EBO IE= 1mA, IC=0 9 V Collector cut-off current ICBO VCB= 700V, IE=0 1 mA Emitter cut-off current IEBO VEB=9V, IC=0 100 µA hFE(1) VCE= 5V, IC= 2 A 8 40 DC current gain hFE(2) VCE=5 V, IC=5A 5 30 Collector-emitter saturation voltage VCE(sat) IC=2A,IB=0.4A 1 V Base-emitter saturation voltage VBE(sat) IC=2A, IB= 0.4A 1.2 V Transition frequency fT Ic=500mA,VCE=10V f=1MHZ 4 MHZ Collector output capacitance Cob VCE=10,IE=0, f=0.1MHz 80 pF Fall time tf 0.7 µs Storage time ts Vcc=125V, Ic=5A IB1=-IB2=1A 3 µs CLASSIFICATION OF hFE(1) Rank Range 8-15 15-20 20-25 25-30 30-35 35-40 1 2 3 TO-220 1. BASE 2. COLLECTOR 3. EMITTER |
同様の部品番号 - 3DD13007 |
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同様の説明 - 3DD13007 |
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