MJ8501 datasheet(1/2 Pages) ISC

部品番号	MJ8501

部品情報	Silicon NPN Power Transistor

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メーカー	ISC [Inchange Semiconductor Company Limited]

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

MJ8501

DESCRIPTION

· Collector-Emitter Sustaining Voltage-

: VCEO(SUS) = 800V(Min)

·High Switching Speed

APPLICATIONS

·Designed for high-voltage ,high-speed, power switching in

inductive circuits where fall time is critical. They are partic-

ularly suited for line operated switch-mode applications.

Typical applications:

·Switching regulators

·Inverters

·Solenoid and relay drivers

·Motor controls

·Deflection circuits

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCEV

Collector-Emitter Voltage

1400

V

VCEO(SUS)

Collector-Emitter Voltage

800

V

VEBO

Emitter-Base Voltage

8

V

IC

Collector Current-Continuous

2.5

A

ICM

Collector Current-Peak

5

A

IB

B

Base Current-Continuous

2

A

IBM

Base Current-Peak

4

A

PC

Collector Power Dissipation@TC=25℃

125

W

TJ

Junction Temperature

200

℃

Tstg

Storage Temperature

-65~200

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

1.4

℃/W

isc Website：www.iscsemi.cn

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