For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

8

8 - 385

Outline Drawing

Absolute Maximum Ratings

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

Drain Bias Voltage

+5V

Drain Bias Current

60 mA

RF Input Power

5 dBm

Gate Bias Voltage

-1 to 0.3 V

Continuous Pdiss (T = 85 °C)

(derate 5.8 mW/°C above 85 °C)

0.55 W

Thermal Resistance

(Channel to ground paddle)

172 °C/W

Channel Temperature

180 °C

Storage Temperature

-65 to +150 °C

Operating Temperature

-40 to +85 °C

HMC772LC4

v01.0709

GaAs HEMT MMIC LOW NOISE

AMPLIFIER, 2 - 12 GHz

NOTES:

1. PACKAGE BODY MATERIAL: ALUMINA.

2. LEAD AND GROUND PADDLE PLATING: GOLD FLASH OVER NICKEL.

3. DIMENSIONS ARE IN INCHES (MILLIMETERS).

4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.

5. PACKAGE WARP SHALL NOT EXCEED 0.05MM DATUM – C –

6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO

PCB RF GROUND.