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STM8L101F2P3ATR データシート(PDF) 62 Page - STMicroelectronics

部品番号 STM8L101F2P3ATR
部品情報  8-bit ultralow power microcontroller with up to 8 Kbytes Flash, multifunction timers, comparators, USART, SPI, I2C
PDF  77 Pages
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM8L101F2P3ATR データシート(HTML) 62 Page - STMicroelectronics

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Electrical parameters
STM8L101xx
62/77
Doc ID 15275 Rev 7
Electromagnetic interference (EMI)
Based on a simple application running on the product (toggling 2 LEDs through the I/O
ports), the product is monitored in terms of emission. This emission test is in line with the
norm SAE J 1752/3 which specifies the board and the loading of each pin.
Absolute maximum ratings (electrical sensitivity)
Based on two different tests (ESD and LU) using specific measurement methods, the
product is stressed in order to determine its performance in terms of electrical sensitivity.
For more details, refer to the application note AN1181.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts*(n+1) supply pin). One model
can be simulated: Human Body Model. This test conforms to the JESD22-A114A/A115A
standard.
Table 35.
EMI data (1)
1.
Not tested in production.
Symbol
Parameter
Conditions
Monitored
frequency band
Max vs.
Unit
16 MHz
SEMI
Peak level
VDD = 3.6 V,
TA = +25 °C,
LQFP32
conforming to
IEC61967-2
0.1 MHz to 30 MHz
-3
dB
μV
30 MHz to 130 MHz
-6
130 MHz to 1 GHz
-5
SAE EMI Level
1
-
Table 36.
ESD absolute maximum ratings
Symbol
Ratings
Conditions
Maximum
value (1)
1.
Data based on characterization results, not tested in production.
Unit
VESD(HBM)
Electrostatic discharge voltage
(human body model)
TA = +25 °C
2000
V
VESD(CDM)
Electrostatic discharge voltage
(charge device model)
1000



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