BAS21SW datasheet(6/11 Pages) NXP

6 / 11 page

BAS21W_SER_1

Product data sheet

Rev. 01 — 9 October 2009

6 of 11

NXP Semiconductors

BAS21W series

High-voltage switching diodes

Test information

8.1 Quality information

This product has been qualiﬁed in accordance with the Automotive Electronics Council

(AEC) standard

Q101 - Stress test qualiﬁcation for discrete semiconductors, and is

suitable for use in automotive applications.

f = 1 MHz; Tamb =25 °C

FR4 PCB, standard footprint

(1) Single diode loaded.

(2) Double diode loaded.

Fig 4.

Diode capacitance as a function of reverse

voltage; typical values

Fig 5.

Forward current as a function of ambient

temperature; derating curve

mbg447

VR (V)

1.0

0.8

0.2

0.6

0.4

(pF)

Tamb (°C)

200

150

100

006aab214

100

200

300

(mA)

(2)

(1)

(1) IR =1mA

Fig 6.

Reverse recovery time test circuit and waveforms

trr

(1)

+ IF

output signal

10 %

90 %

input signal

V = VR + IF × RS

RS = 50 Ω

D.U.T.

Ri = 50 Ω

SAMPLING

OSCILLOSCOPE

mga881

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