SS8050 datasheet(1/1 Pages) DAYA

部品番号	SS8050

部品情報	TO-92 Plastic-Encapsulate Transistors

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メーカー	DAYA [Daya Electric Group Co., Ltd.]

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TO-92

Plastic-Encapsulate Transistors

SS8050

TRANSISTOR (NPN)

FEATURES

Power dissipation

PCM : 1 W

(TA=25

℃)

: 2 W

(TC=25

℃)

MAXIMUM RATINGS (TA=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

40

V

VCEO

Collector-Emitter Voltage

25

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current -Continuous

1.5

A

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC=100uA, IE=0

40

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=0.1mA, IB=0

25

V

Emitter-base breakdown voltage

V(BR)EBO

IE=100μA, IC=0

5

V

Collector cut-off current

ICBO

VCB=40V, IE=0

0.1

μA

Emitter cut-off current

ICEO

VCE=20V, IE=0

0.1

μA

Emitter cut-off current

IEBO

VEB=5V, IC=0

0.1

μA

hFE(1)

VCE=1V, IC=100mA

85

400

DC current gain

hFE(2)

VCE=1V, IC=800mA

40

Collector-emitter saturation voltage

VCE(sat)

IC=800mA, IB=80mA

0.5

V

Base-emitter saturation voltage

VBE(sat)

IC=800mA, IB=80mA

1.2

V

Base-emitter voltage

VBE

VCE=1V, IC=10mA

1

V

Transition frequency

fT

VCE=10V, IC=50mA,f=30MHZ

100

MHz

CLASSIFICATION OF hFE(1)

Rank

B

C

D

D3

Range

85-160

120-200

160-300

300-400

1 2 3

TO-92

1. EMITTER

2. BASE

3. COLLECTOR

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