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TLE8203E データシート(PDF) 21 Page - Infineon Technologies AG

部品番号 TLE8203E
部品情報  Mirror Power IC
PDF  33 Pages
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メーカー  INFINEON [Infineon Technologies AG]
ホームページ  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

TLE8203E データシート(HTML) 21 Page - Infineon Technologies AG

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Final Data Sheet
21
Rev. 1.0, 2009-02-04
TLE 8203E
Power-Outputs 4-6 (Bridge Outputs)
8.2.7
Dead-time L to H
t
DLH4
3––
µs
t
dONH4 - tdOFFL4
Short Circuit Protection
8.2.8
Over-current shutdown threshold
I
SD4
3
4
8
A
high- and low-
side
8.2.9
Shutdown delay time
t
dSD4
10
25
50
µs
8.2.10
Short Circuit current1)
I
SC4
–6–
A
Open Load Detection
8.2.11
Detection current
I
OCD4
12
25
45
mA
low-side
8.2.12
Delay time
t
dOC4
200
350
600
µs
Leakage Current
8.2.13
OFF-state output current
I
OUT4_leakage ––10
µA
V
OUT = 0.2 V
1) Not subject to production test - specified by design.
Electrical Characteristics: OUT 5, 6 (driver for mirror x-y position)
V
S = 8 V to 20 V; VDD = 4.75 V to 5.25 V, Tj = -40 °C to +150 °C; INH = High; all outputs open, all voltages with
respect to ground, positive current flowing into pin (unless otherwise specified)
Pos.
Parameter
Symbol
Limit Values
Un
it
Conditions
Min.
Typ.
Max.
Static Drain-Source ON-Resistance
8.2.14
High- and low-side switch
R
DSON56
–0.5
I
OUT = ±0.5 A;
T
j = 25 °C
–0.8
1.3
I
OUT = ±0.5 A
T
j = 150 °C
Switching Times
8.2.15
High-side ON delay time
t
dONH56
–50
100
µs VS = 14 V;
resistive load of
25
Ω, see Figure 11
and Figure 12
8.2.16
High-side OFF delay time
t
dOFFH56
–25
50
µs
8.2.17
Low-side ON delay time
t
dONL56
–50
100
µs
8.2.18
Low-side OFF delay time
t
dOFFL56
–25
50
µs
8.2.19
Dead-time H to L
t
DHL56
3–
µs tdONL56 - tdOFFH56
8.2.20
Dead-time L to H
t
DLH56
3–
µs tdONH56 - tdOFFL56
Short Circuit Protection
8.2.21
Over-current shutdown threshold
I
SD56
1.25
1.5
3.0
A
high- and low-side
8.2.22
Shutdown delay time
t
dSD56
10
25
50
µs
8.2.23
Short Circuit current1)
I
SC56
–3.0
A
Open Load Detection
8.2.24
Detection current
I
OCD56
12
25
40
mA low-side
8.2.25
Delay time
t
dOC56
200
350
600
µs
Electrical Characteristics: OUT4 (Driver for mirror xy and halfbridge for fold) (cont’d)
V
S = 8 V to 20 V; VDD = 4.75 V to 5.25 V, Tj = -40 °C to +150 °C; INH = High; all outputs open, all voltages with
respect to ground, positive current flowing into pin (unless otherwise specified)
Pos.
Parameter
Symbol
Limit Values
Unit
Conditions
Min.
Typ.
Max.



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