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AT25FS010 データシート(PDF) 4 Page - ATMEL Corporation |
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AT25FS010 データシート(HTML) 4 Page - ATMEL Corporation |
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4 / 24 page ![]() 4 5167E–SFLSH–5/09 AT25FS010 Notes: 1. The programming time for n bytes will be equal to n x tBPC. 2. This parameter is ensured by characterization at 3.0v, 25c only. 3. One write cycle consists of erasing a sector, followed by programming the same sector. Table 1-3. AC Characteristics (Preliminary – Subject to Change) Applicable over recommended operating range from TA = –40°C to +85°C, VCC = +2.7V to +3.6V CL = 1 TTL Gate and 30 pF (unless otherwise noted) Symbol Parameter Min Typ Max Units fSCK SCK Clock Frequency 0 50 MHz tRI Input Rise Time 5 ns tFI Input Fall Time 5 ns tWH SCK High Time 9 ns tWL SCK Low Time 9 ns tCS CS High Time 100 ns tCSS CS Setup Time 5 ns tCSH CS Hold Time 5 ns tSU Data In Setup Time 5 ns tH Data In Hold Time 5 ns tHD Hold Setup Time 5 ns tCD Hold Hold Time 5 ns tV Output Valid 9ns tHO Output Hold Time 0 ns tLZ Hold to Output Low Z 9 ns tHZ Hold to Output High Z 9 ns tDIS Output Disable Time 9 ns tse Sector Erase Time 50 200 ms tbe Block Erase Time 200 500 ms tce Chip Erase Time 1.6 4 s tSR Status Register Write Cycle Time 60 ms tBPC Byte Program Cycle Time(1) 30 50 µs Endurance(2) 10K Write Cycles(3) |
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