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H7N1002LS データシート(PDF) 3 Page - Renesas Technology Corp

部品番号 H7N1002LS
部品情報  Silicon N Channel MOS FET High Speed Power Switching
PDF  9 Pages
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メーカー  RENESAS [Renesas Technology Corp]
ホームページ  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

H7N1002LS データシート(HTML) 3 Page - Renesas Technology Corp

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H7N1002LD, H7N1002LS, H7N1002LM
Preliminary
REJ03G1131-0800 Rev.8.00 Nov 13, 2009
Page 3 of 8
Main Characteristics
Case Temperature
Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage
VDS (V)
Maximum Safe Operation Area
Gate to Source Voltage
VGS (V)
Typical Transfer Characteristics
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
200
0
0
100
150
50
100
150
200
50
02
46
8
10
3.4 V
50
3.6 V
50
20
40
0
10
30
0123
4
5
–25°C
25°C
Tc = 75°C
VDS = 10 V
Pulse Test
Pulse Test
VGS = 3 V
10
30
20
0
40
0.10.31
3
30
10
100 300
1000
300
100
30
10
3
0.3
0.1
0.03
1
Ta = 25°C
DC Operation
(Tc = 25°C)
PW = 10 ms
(1shot)
1
m
s
100
μs
10
μs
Operation in
this area is
limited by RDS(on)
Drain Current ID (A)
Static Drain to Source on State Resistance
vs. Drain Current
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
220
50
5
50
0.5
10
200
10
1
2
5
20
100
VGS = 4.5 V
10 V
Pulse Test
0
5
10
15
20
1.0
0.8
0.6
0.4
0.2
0
4 V
ID = 50 A
20 A
10 A
Pulse Test
10 V



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