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HAT2202C データシート(PDF) 4 Page - Renesas Technology Corp

部品番号 HAT2202C
部品情報  Silicon N Channel MOS FET Power Switching
PDF  7 Pages
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メーカー  RENESAS [Renesas Technology Corp]
ホームページ  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HAT2202C データシート(HTML) 4 Page - Renesas Technology Corp

  HAT2202C Datasheet HTML 1Page - Renesas Technology Corp HAT2202C Datasheet HTML 2Page - Renesas Technology Corp HAT2202C Datasheet HTML 3Page - Renesas Technology Corp HAT2202C Datasheet HTML 4Page - Renesas Technology Corp HAT2202C Datasheet HTML 5Page - Renesas Technology Corp HAT2202C Datasheet HTML 6Page - Renesas Technology Corp HAT2202C Datasheet HTML 7Page - Renesas Technology Corp  
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HAT2202C
REJ03G1236-0600 Rev.6.00 Oct 01, 2009
Page 4 of 6
Case Temperature
Tc
(°C)
Static Drain to Source on State Resistance
vs. Temperature
Drain Current ID (A)
Forward Transfer Admittance vs.
Drain Current
Drain to Source Voltage VDS (V)
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
Dynamic Input Characteristics
Drain Current ID (A)
Switching Characteristics
Source to Drain Voltage VSD (V)
Reverse Drain Current vs.
Source to Drain Voltage
75
60
45
30
15
–25
0
25
50
75
100 125 150
0
0.3
0.1
1
10
100
30
10
3
1
0.3
0.1
3
25
°C
75
°C
VGS = 2.5 V
1, 1.5 ,3 A
0
10
20
1000
100
300
40
0
8
30
6
20
4
10
2
24
6
8
10
0
100
1
10
0.1
0.3
1
3
10
30
100
30
10
Ciss
Coss
ID = 3 A
VDD
VGS
515
25
0
0.4
0.8
1.2
1.6
2.0
20
8
VGS = 0 V
4
12
16
3 A
ID = 1, 1.5 A
4.5 V
5 V
Crss
VGS = 4.5 V, VDD = 10 V
Rg = 4.7
Ω, duty ≤ 1 %
Tc = –25
°C
Pulse Test
VDS = 10 V
Pulse Test
VGS = 0
f = 1 MHz
VDD = 5 V
10 V
20 V
VDD = 20 V
10 V
5 V
tr
tf
td(off)
td(on)
Pulse Test



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