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A
Ac
cttiiv
ve
e D
Do
ow
wn
n
M
Miix
xe
er
r
M
MD
D2
23
39
91
1
▪ Tel : 82-31-250-5011
▪ All specifications may change without notice.
▪ rfsales@rfhic.com
▪ Version 6.05
Product Features
Application
• Integrated Monolithic GaAs Mixer Package Module
• High Reliability
• Lower Manufacturing Cost
• Higher Productivity
• Very Low Noise Figure & Low Distortion
• Repeater
• Base Station
• RF Sub-Systems
Description
The IC operates from a positive +5V rail consuming 145 mA of current while only requiring a 2±2 dBm LO drive.
The MCM is implemented with reliable and mature GaAs MESFET technology.
Specifications
(Operating Temperature: -30
°C~+70°C)
Test Conditions : Ta=25
°C, Vdd=5V, P
LO2dBm, IF=70MHz,
Part
Number
RF
Frequency
(MHz)
IF
Frequency
(MHz)
Conversion
Gain
(dB)
IIP3
(dBm)
NF
(dB)
Output
P1dB
(dB)
LO to IF
Leakage
(dBm)
RF to IF
Leakage
(dBm)
Vdd/Idd
2200~2350
9
17
8.5
9
MD2391
2350~2500
50-200
7
18
9
7
-18
-18
5V/145mA
Functional Diagram
Package Dimensions (Type: HY-2)
Top
Side
Recommended Pattern
Pin No.
Function
1 or 14
Vdd+5V
5
RF In
9
LO In
12
IF Out
2,3,4,6,7,8,10,11,13
Ground
1
1
5
9
12
14
7
8
14
Package Type: HY-2
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