CHA2097a

Ref. : DSCHA20978021

1/8

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France

Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

20-40GHz Variable Gain Amplifier

GaAs Monolithic Microwave IC

Description

The CHA2097a is a variable gain broadband

three-stage monolithic amplifier. It is designed

for a wide range of applications, from military to

commercial

communication

systems. The

backside of the chip is both RF and DC grounds.

This helps simplify the assembly process.

The circuit is manufactured with a PM-HEMT

process, 0.25µm gate length, via holes through

the substrate, air bridges and electron beam

gate lithography.

It is available in chip form.

Main Features

■ Broadband performances : 20-40GHz

■ 14dBm output power ( 1dB gain comp. )

■ 18dB ±1.5dB gain

■ 10dB gain control range.

■ Low DC power consumption, 140mA @ 3.5V

■ Chip size :

2.04 X 0.97 X 0.10 mm

Vd1

Vd23

Vctrl

Vg1

Vg2

Vg3

In

Out

Main Characteristics

Tamb. = 25°C

Symbol

Parameter

Min

Typ

Max

Unit

Fop

Operating frequency range

20

40

GHz

G

Small signal gain

16

18

dB

Gctrl

Gain control range

10

dB

P1dB

Output power at 1dB gain compression

13

14

dBm

Id

Bias current

140

200

mA

ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !

Typical on wafer measurements

-25

-20

-15

-10

-5

0

5

10

15

20

25

0

10

203040

5060

frequency (GHz)

S22

S11