CHA2098b

20-40GHz High Gain Buffer Amplifier

Ref. : DSCHA20981233 21-August-01

2/8

Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

Electrical Characteristics for Broadband Operation

Tamb = +25°C, Vd1,2,3 = 3.5V

Symbol

Parameter

Min

Typ

Max

Unit

Fop

Operating frequency range (1)

20

40

GHz

G

Small signal gain (1)

17

19

dB

∆G

Small signal gain flatness (1)

±1.5

dB

Is

Reverse isolation (1)

30

dB

P1db

Output power at 1dB gain compression (1)

13

16

dBm

P03

Output power at 3dB gain compression

15

16

dBm

VSWRin

Input VSWR (1)

3.0:1

VSWRout

Output VSWR (1)

3.0:1

NF

Noise figure

10.0

dB

Id

Bias current

150

200

mA

(1) These values are representative of on-wafer measurements that are made without bonding

wires at the RF ports.

Absolute Maximum Ratings

Tamb. = 25°C (1)

Symbol

Parameter

Values

Unit

Vd

Drain bias voltage

4.0

V

Id

Drain bias current

200

mA

Vg

Gate bias voltage

-2.0 to +0.4

V

Ta

Operating temperature range

-40 to +85

°C

Tstg

Storage temperature range

-55 to +155

°C

(1) Operation of this device above anyone of these parameters may cause permanent damage.