PSII15SLASH12 datasheet(1/2 Pages) POWERSEM

部品番号	PSII15/12

部品情報	IGBT Module

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メーカー	POWERSEM [Powersem GmbH]

ホームページ	http://www.powersem.com

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1 / 2 page

IGBT Module

I

C25

= 18 A

V

CES

= 1200 V

V

CE(sat)typ. = 2.3 V

Features

•

NPT IGBT’s

- positive temperature coefficient

of saturation voltage

- fast switching

•

FRED diodes

- fast reverse recovery

- low forward voltage

•

Industry Standard Package

- solderable pins for PCB

mounting

- isolated DCB ceramic base plat

e

•

UL registered, E 148688

Applications

•

AC drives

•

power supplies with power factor

correction

Advantages

•

Easy to mount with two screws

•

Space and weight savings

•

Improved temperature and power

cycling capability

•

High power density

•

Small and light weight

POWERSEM GmbH, Walpersdorfer Str. 53

D - 91126 Schwabach

Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20

ECO-PACTM 2

 2002 POWERSEM reserves the right to change limits, test conditions and dimensions

Preliminary Data Sheet

*NTC optional

Caution: These devices are sensitive

to electrostatic discharge. Users should

observe proper ESD handling precautions.

PSII 15/12*

S9

X18

N9

L9

W14

R5

N5

H5

D5

A5

K12

K13

G1

F3

K10

A1

C1

PSII 15/12*

IGBTs

Symbol

Conditions

Maximum Ratings

V

CES

T

VJ = 25°C to 150°C

1200

V

GES

± 20

V

I

C25

T

C = 25°C

18

A

I

C80

T

C = 80°C

14

A

I

CM

V

GE = ±15 V; RG = 82 Ω; TVJ = 125°C

20

A

V

CEK

RBSOA, Clamped inductive load; L = 100 µH

V

CES

t

SC

V

CE = 720 V; VGE = ±15 V; RG = 82 Ω; TVJ = 125°C

10

µs

(SCSOA)

non-repetitive

P

tot

T

C = 25°C

90

W

Symbol

Conditions

Characteristic Values

(T

VJ = 25°C, unless otherwise specified)

min.

typ.

max.

V

CE(sat)

I

C = 10 A; VGE = 15 V; TVJ =

25°C

2.3

2.7

V

T

VJ = 125°C

2.7

V

GE(th)

I

C = 0.4 mA; VGE = VCE

4.5

6.5

V

I

CES

V

CE = VCES;VGE = 0 V; TVJ =

25°C

0.5 mA

T

VJ = 125°C

0.8

mA

I

GES

V

CE = 0 V; VGE =

± 20 V

200

nA

t

d(on)

50

ns

t

r

40

ns

t

d(off)

290

ns

t

f

60

ns

E

on

1.2

mJ

E

off

1.1

mJ

C

ies

V

CE = 25 V; VGE = 0 V; f = 1 MHz

600

pF

Q

Gon

V

CE = 600 V; VGE = 15 V; IC = 10 A

45

nC

R

thJC

(per IGBT)

1.4 K/W

R

thJH

(per IGBT) with heatsink compound

2.7

K/W

Inductive load, T

VJ = 125°C

V

CE = 600 V; IC = 10 A

V

GE = ±15 V; RG = 82 Ω

同様の部品番号 - PSII15/12

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