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APTM10DHM09T3G データシート(PDF) 2 Page - Microsemi Corporation

部品番号 APTM10DHM09T3G
部品情報  Asymmetrical - Bridge MOSFET Power Module
PDF  7 Pages
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メーカー  MICROSEMI [Microsemi Corporation]
ホームページ  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTM10DHM09T3G データシート(HTML) 2 Page - Microsemi Corporation

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APTM10DHM09T3G
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All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VGS = 0V,VDS = 100V
Tj = 25°C
100
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 80V
Tj = 125°C
500
µA
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 69.5A
9
10
m
Ω
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 2.5mA
2
4
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±100
nA
Dynamic Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
9875
Coss
Output Capacitance
3940
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
1470
pF
Qg
Total gate Charge
350
Qgs
Gate – Source Charge
60
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 50V
ID =139A
180
nC
Td(on)
Turn-on Delay Time
35
Tr
Rise Time
70
Td(off)
Turn-off Delay Time
95
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 66V
ID = 139A
RG = 5Ω
125
ns
Eon
Turn-on Switching Energy
552
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 66V
ID = 139A, RG = 5Ω
604
µJ
Eon
Turn-on Switching Energy
608
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 66V
ID = 139A, RG = 5Ω
641
µJ
Diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
200
V
Tj = 25°C
250
IRM
Maximum Reverse Leakage Current
VR=200V
Tj = 125°C
500
µA
IF
DC Forward Current
Tc = 80°C
100
A
IF = 100A
1
IF = 200A
1.4
VF
Diode Forward Voltage
IF = 100A
Tj = 125°C
0.9
V
Tj = 25°C
60
trr
Reverse Recovery Time
Tj = 125°C
110
ns
Tj = 25°C
200
Qrr
Reverse Recovery Charge
IF = 100A
VR = 133V
di/dt =200A/µs
Tj = 125°C
840
nC



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