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APTM120DA68T1G データシート(PDF) 1 Page - Microsemi Corporation

部品番号 APTM120DA68T1G
部品情報  Boost chopper MOSFET Power Module
PDF  5 Pages
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メーカー  MICROSEMI [Microsemi Corporation]
ホームページ  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTM120DA68T1G データシート(HTML) 1 Page - Microsemi Corporation

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APTM120DA68T1G
www.microsemi.com
1 – 5
11
CR1
Q2
10
9
12
NTC
12
3
4
6
5
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
1200
V
Tc = 25°C
15
ID
Continuous Drain Current
Tc = 80°C
11
IDM
Pulsed Drain current
90
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
816
m
Ω
PD
Maximum Power Dissipation
Tc = 25°C
357
W
IAR
Avalanche current (repetitive and non repetitive)
12
A
Application
•
AC and DC motor control
•
Switched Mode Power Supplies
•
Power Factor Correction
Features
•
Power MOS 8™ MOSFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Avalanche energy rated
-
Very rugged
•
Very low stray inductance
•
Internal thermistor for temperature monitoring
•
High level of integration
Benefits
•
Outstanding performance at high frequency operation
•
Direct mounting to heatsink (isolated package)
•
Low junction to case thermal resistance
•
Solderable terminals both for power and signal for
easy PCB mounting
•
Low profile
•
RoHS Compliant
Boost chopper
MOSFET Power Module
VDSS = 1200V
RDSon = 680mΩ typ @ Tj = 25°C
ID = 15A @ Tc = 25°C


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