APTM120U10SCAVG datasheet(8/8 Pages) MICROSEMI

部品番号	APTM120U10SCAVG

部品情報	Single switch Series & SiC parallel diodes MOSFET Power Module

PDF	8 Pages

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メーカー	MICROSEMI [Microsemi Corporation]

ホームページ	http://www.microsemi.com

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APTM120U10SCAVG

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SiC Typical Performance Curve

Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration

0.9

0.7

0.5

0.3

0.1

0.05

Single Pulse

0.04

0.08

0.12

0.16

0.2

0.24

0.00001

0.0001

0.001

0.01

0.1

Rectangular Pulse Duration (Seconds)

Forward Characteristics

TJ=25°C

TJ=75°C

TJ=125°C

TJ=175°C

120

160

00.5

1.5

22.533.5

VF Forward Voltage (V)

Reverse Characteristics

TJ=25°C

TJ=75°C

TJ=125°C

TJ=175°C

150

300

450

600

750

900

400

600

800

1000 1200 1400 1600

VR Reverse Voltage (V)

Capacitance vs.Reverse Voltage

900

1800

2700

3600

4500

5400

6300

100

1000

VR Reverse Voltage

Microsemi reserves the right to change, without notice, the specifications and information contained herein

Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103

5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262

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