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MS1642P データシート(PDF) 1 Page - Microsemi Corporation |
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MS1642P データシート(HTML) 1 Page - Microsemi Corporation |
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1 / 3 page ![]() MS1642P Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. DESCRIPTION: The MS1642 is a gold metallized silicon NPN transistor designed for general purpose amplifier applications in the VHF and UHF frequency bands. Diffused emitter ballast resistors and computer controlled wirebonding techniques ensure maximum device reliability and consistency. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit PDISS Power Dissipation* 27 W IC(max) Device Current* 1.5 A TSTG Storage Temperature -65 to +150 ºC VCBO Collector – Base Voltage 60 V VCEO Collector - Emitter Voltage 33 V VEBO Emitter - Base Voltage 4.0 V Thermal Data RTH(J-C) Thermal Resistance Junction-case 6.4 °C/W *Applies only to rated RF amplifier operation Features • 400 MHz • GOLD METALLIZATION • P OUT = 10 W MINIMUM • G P = 12 dB MINIMUM • INFINITE VSWR CAPABILITY • COMMON EMITTER CONFIGURATION RF & MICROWAVE TRANSISTORS VHF, UHF GENERAL PURPOSE |
同様の部品番号 - MS1642P |
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同様の説明 - MS1642P |
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