MS3022 datasheet(1/5 Pages) MICROSEMI

部品番号	MS3022

部品情報	1 Watts, 28 Volts Class-C, CW 1.0 to 2.0 GHz

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メーカー	MICROSEMI [Microsemi Corporation]

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Microsemi reserves the right to change, without notice, the specifications and information contained herein.

Visit our web site at www.microsemi.com or contact our factory direct.

MS3022

1 Watts, 28 Volts

Class-C, CW 1.0 to 2.0 GHz

GENERAL DESCRIPTION

The MS3022 is a common base silicon NPN transistor designed for Class-C

general purpose microwave applications. The device is capable of withstanding an

infinite load VSWR under rated conditions. The MS3022 is particularly suited for

microwave communication links in the 1.0 to 2.0 GHz frequency ranges.

Features

• GOLD METALLIZATIOM

• P

OUT = 1.0 W MINIMUM

• G

P = 7.0 dB

• COMMON BASE

CASE OUTLINE

.250 2LFL M210

(Common Base)

ABSOLUTE MAXIMUM RATINGS

Power Dissipation

Device Dissipation @25

°C (P

d)

7 W (At rated pulse condition)

Voltage and Current

Collector to Base Voltage (BVCES)

45 V

Emitter to Base Voltage (BVEBO)

3.5 V

Collector Current (IC)

0.2 A

Temperatures

Storage Temperature

-65 to +150

°C

Operating Junction Temperature

+200

°C

PIN CONNECTION

1. Collector 2. Base

3. Emitter

4. Base

ELECTRICAL CHARACTERISTICS @ 25

°°°°C

SYMBOL

CHARACTERISTICS

TEST CONDITIONS

MIN

TYP

MAX

UNITS

BVCEO

Collector to Emitter Breakdown

IC = 5 mA, RBE = 50

45

V

BVCBO

Collector to Base Breakdown

IC = 1 mA, IB = 0 mA

45

V

BVEBO

Emitter to Base Breakdown

IE = 1 mA, IC = 0 mA

3.5

V

ICBO

Collector to Base Leakage

VCB = 28.0 V

0.5

mA

HFE

DC – Current Gain

IC = 0.1A, VCE = 5V

15

120

-

θjc1

Thermal Resistance

25

°C/W

NOTES:

1. At rated output power, pulse conditions and MSC fixture

Rev. A : Oct. 2009

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