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C1815 データシート(PDF) 1 Page - Rectron Semiconductor |
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C1815 データシート(HTML) 1 Page - Rectron Semiconductor |
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1 / 2 page ![]() FEATURES MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-O rate flame retardant * Lead: MIL-STD-202E method 208C guaranteed * Mounting position: Any * Weight: 0.008 gram SOT-23 C1815 Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 OC ambient temperature unless otherwise specified. 0.118(3.00) 0.012(0.30) 0.020(0.50) 0.003(0.08) 0.006(0.15) 0.110(2.80) 0.019(2.00) 0.071(1.80) 0.100(2.55) 0.089(2.25) 0.020(0.50) 0.012(0.30) 0.043(1.10) 0.035(0.90) 0.004(0.10) 0.000(0.00) SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN) 2007-3 ELECTRICAL CHARACTERISTICS ( @ TA = 25OC unless otherwise noted ) Emitter cut-off current (VEB= 5V, IC=0) DC current gain (VCE= 6V, IC= 2mA) Collector cut-off current (VCB= 50V, IB=0) Collector-emitter saturation voltage (IC= 100mA, IB= 10mA) Transition frequency (VCE= 10V, IC= 1mA, f= 30MHZ) Base-emitter voltage (IC= 100mA, IB= 10mA) CHARACTERISTICS SYMBOL UNITS - - 0.1 - 0.1 400 m A m A m A V V V V MHz Collector-base breakdown voltage (IC= 100mA, IE=0) Collector-emitter breakdown voltage (IC= 0.1mA, IB=0) Collector cut-off current (VCB= 60V, IE=0) CLASSIFICATION OF hFE(1) RANK Range DEVICE MARKING L 130 - 200 200 - 400 HF V(BR)CBO V(BR)CEO IEBO hFE(1) ICBO ICEO VCE(sat) VBE(sat) fT MAX 60 50 - - - - - 80 130 MIN H 0.055(1.40) 0.047(1.20) - 0.1 1 0.25 - - - - - TYP - - - - BASE EMITTER COLLECTOR * * * * Power dissipation PCM : 0.2 W (Tamb=25OC) Collector current ICM : 0.15 mA Collector-base voltage V(BR)CBO : 60 V Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC 1 1 2 3 2 3 Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Note : "Fully ROHS compliant", "100% Sn plating (Pb-free)". |
同様の部品番号 - C1815 |
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同様の説明 - C1815 |
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