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HFS6N90 データシート(PDF) 3 Page - SemiHow Co.,Ltd. |
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HFS6N90 データシート(HTML) 3 Page - SemiHow Co.,Ltd. |
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3 / 7 page ![]() ◎ SEMIHOW REV.A0,Dec 2005 0 5 10 15 20 25 30 35 40 0 2 4 6 8 10 12 V DS = 450V V DS = 180V V DS = 720V ※ Note : I D = 6.0A Q G, Total Gate Charge [nC] 10 -1 10 0 10 1 0 500 1000 1500 2000 2500 C iss = Cgs + Cgd (Cds = shorted) C oss = Cds + Cgd C rss = Cgd ※ Notes : 1. V GS = 0 V 2. f = 1 MHz C rss C oss C iss V DS, Drain-Source Voltage [V] 10 -1 10 0 10 1 10 -2 10 -1 10 0 10 1 V GS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V ※ Notes : 1. 250μ s Pulse Test 2. T C = 25 ℃ V DS, Drain-Source Voltage [V] Typical Characteristics 2 4 6 8 10 10 -1 10 0 10 1 150 oC 25 oC -55 oC ※ Notes : 1. V DS = 50V 2. 250μ s Pulse Test V GS, Gate-Source Voltage [V] 0 3 6 9 12 15 18 1.5 2.0 2.5 3.0 3.5 4.0 4.5 V GS = 20V V GS = 10V ※ Note : T J = 25 ℃ I D, Drain Current [A] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 -1 10 0 10 1 150 ℃ ※ Notes : 1. V GS = 0V 2. 250μ s Pulse Test 25℃ V SD, Source-Drain voltage [V] Figure 1. On Region Characteristics Figure 2. Transfer Characteristics Figure 3. On Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics |
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