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KSH13005AF データシート(PDF) 2 Page - SemiHow Co.,Ltd. |
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KSH13005AF データシート(HTML) 2 Page - SemiHow Co.,Ltd. |
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2 / 5 page ![]() Switch Mode series NPN silicon Power Transistor KSH13005AF Switch Mode series NPN silicon Power Transistor - High voltage, high speed power switching - Suitable for switching regulator, inverters motor controls CHARACTERISTICS SYMBOL RATING UNIT Collector-Base Voltage Collector Emitter Voltage VCBO V 700 400 V V 4 Amperes NPN Silicon Power Transistor 75 Watts Absolute Maximum Ratings TC=25℃ unless otherwise noted TO-220F 1. Base 2. Collector 3. Emitter Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Base Current Collector Dissipation(Tc=25℃) Junction Temperature Storage Temperature VCEO VEBO IC ICP IB PC TJ TSTG 400 9 4 8 2 30 150 -65~150 V V A A A W ℃ ℃ 1 2 3 CHARACTERISTICS SYMBOL Test Condition Min Typ. Max Unit Collector-Emitter Breakdown Voltage VCEO IC=10mA, IB=0 400 V Emitter Cut-off Current IEBO VEB=9V,IC=0 1 ㎃ *DC Current Gain hFE1 hFE2 VCE=5V,IC=1A VCE=5V,IC=2A 10 8 60 40 Electrical Characteristics TC=25℃ unless otherwise noted hFE2 VCE 5V,IC 2A 8 40 *Collector-Emitter Saturation Voltage VCE(sat) IC=1A,IB=0.2A IC=2A,IB=0.5A IC=4A,IB=1A 0.5 0.6 1 V V V *Base-Emitter Saturation Voltage VBE(sat) IC=1A,IB=0.2A IC=2A,IB=0.5A 1.2 1.6 V V Output Capacitance Cob VCB=10V, f=0.1MHz 65 ㎊ Current Gain Bandwidth Product fT VCE=10V,IC=0.5A 4 ㎒ T CE , C Turn on Time ton Vcc=125V, Ic=2A IB1=0.4A, IB2= -0.4A RL=62.5Ω 0.8 ㎲ Storage Time tstg 4.0 ㎲ Fall Time tF 0.9 ㎲ * Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% S S SemiHow Symbol Package Mark information. R 19 ~ 28 Note. ◎ SEMIHOW REV.A1,Oct 2007 S YWW Z KSH13005AF S Se o Sy bo YWW Y; year code, WW; week code Z hFE1 Classification hFE1 Classification R 19 28 O 26 ~ 35 Y 33 ~ 40 |
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